US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "GAA LDMOS structure for HV operation" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,941, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"GAA LDMOS structure for HV operation" was invented by Hong-Shyang Wu (Taipei, Taiwan) and Kuo-Ming Wu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A gate-all-around (GAA) high voltage transistor of the laterally double-diffused metal-oxide semiconductor (LDMOS) type has a loop-shaped gate electrode disposed below a surface of a semiconductor substrate. The loop-shaped gate electrode surrounds a vertical channel formed by a first source/drain region, a body region, and a diffusion region. The first source/drain region is on top, ...