US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Fluorine-free interface for semiconductor device performance gain" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,985, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Fluorine-free interface for semiconductor device performance gain" was invented by Yu-Ting Tsai (New Taipei, Taiwan), Chung-Liang Cheng (Changhua, Taiwan), Hong-Ming Lo (Taiwan, Taiwan), Chun-Chih Lin (Taipei, Taiwan) and Chyi-Tsong Ni (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor may include an active region, an epitaxial source/drain formed in and extending above the active region, and a first dielectric layer formed over a portion of the active region. The semiconductor may include a first metal gate and a seco...