US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 15 for "FinFET SRAM cells with reduced fin pitch" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,879, issued on July 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"FinFET SRAM cells with reduced fin pitch" was invented by Chih-Hao Wang (Hsinchu County, Taiwan), Yi-Hsun Chiu (Hsinchu County, Taiwan), Yi-Hsiung Lin (Hsinchu County, Taiwan) and Shang-Wen Chang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) includes a first p-type semiconductor fin, a first dielectric fin, a first hybrid fin, a second hybrid fin, a second dielectric fin, and a second p-type semiconductor fin disposed in this order along a first direction and oriented lengthwise along a second di...