US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Fin field-effect transistor and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,999, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Fin field-effect transistor and method of forming the same" was invented by Shu-Uei Jang (Hsinchu, Taiwan), Shih-Yao Lin (New Taipei, Taiwan), Chieh-Ning Feng (Taichung, Taiwan) and Shu-Yuan Ku (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for making a semiconductor device includes: forming a first semiconductor fin structure and a second semiconductor fin structure over a substrate that both extend along a first lateral direction; forming a dummy gate structure that extends along a second lateral direction perpendicular ...