US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Field effect transistor with negative capacitance dielectric structures" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,978, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Field effect transistor with negative capacitance dielectric structures" was invented by Chansyun David Yang (Shinchu, Taiwan), Keh-Jeng Chang (Shinchu, Taiwan) and Chan-Lon Yang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The structure of a semiconductor device with negative capacitance (NC) dielectric structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming a fin structure with a fin base portion and a fin top portion on a substrate, formin...