US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Diode with reduced current leakage" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,364,020, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Diode with reduced current leakage" was invented by Hsin Fu Lin (Hsinchu County, Taiwan), Shiang-Hung Huang (New Taipei, Taiwan) and Tsung-Hao Yeh (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip includes a well region disposed within a semiconductor substrate and comprises a first doping type. A gate electrode overlies the well region. A first contact region is disposed within the well region and comprises a second doping type...