US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Dielectric structures in semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,933, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd..

"Dielectric structures in semiconductor devices" was invented by Chien-Hung Lin (Hsinchu, Taiwan), Ko-Feng Chen (Hsinchu, Taiwan) and Keng-Chu Lin (Ping-Tung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with densified dielectric structures and a method of fabricating the same are disclosed. The method includes forming a fin structure, forming an isolation structure adjacent to the fin structure, forming a source/drain (S/D) region on the fin structure, depositing a flowable dielectric layer on the isolation structure, converting the ...