US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Deposition apparatus and method of forming metal oxide layer using the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,359,313, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Deposition apparatus and method of forming metal oxide layer using the same" was invented by Ming-Fa Wu (Kaohsiung, Taiwan), Wen-Lung Ho (Hsinchu County, Taiwan) and Jheng-Long Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a deposition apparatus including a process chamber, a wafer platen and a shower head. The wafer platen is disposed in the process chamber. The shower head is located over the wafer platen and includes a shower plate and a hydrophobic film. The shower head has a plurality of dispensing holes for...