ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,234, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Contact structure for semiconductor device" was invented by Hsu-Kai Chang (Hsinchu, Taiwan), Chia-Hung Chu (Taipei, Taiwan), Shuen-Shin Liang (Hsinchu County, Taiwan), Keng-Chu Lin (Ping-Tung, Taiwan), Pinyen Lin (Rochester, N.Y.) and Sung-Li Wang (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a gate structure over the substrate, a source/drain (S/D) contact structure adjacent to the gat...