US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Conductive contact for ion through-substrate via" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,364,048, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Conductive contact for ion through-substrate via" was invented by Min-Ying Tsai (Kaohsiung, Taiwan), Cheng-Ta Wu (Shueishang Township, Taiwan) and Yeur-Luen Tu (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards an integrated chip including a first substrate having a front-side and a back-side opposite the front-side. A first doped region is in the first substrate and extends continuously from the front-side to the back-side. A conductive contact is over the first dope...