ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,919, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Capacitor structure and method of making the same" was invented by Yun-Feng Kao (Hsinchu, Taiwan), Ming-Yen Chuang (Hsinchu, Taiwan), Katherine H. Chiang (New Taipei, Taiwan) and Chien-Hao Huang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A disclosed capacitor structure includes a support structure including a plurality of elongated structures each extending along a longitudinal direction, a transverse direction, and a vertical direction. The plurality of elongated structures includes an alternating stack of first dielectric la...