US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Cap structure coupled to source to reduce saturation current in HEMT device" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,938, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Cap structure coupled to source to reduce saturation current in HEMT device" was invented by Ming-Cheng Lin (Yilan, Taiwan), Chen-Bau Wu (Zhubei, Taiwan), Chun Lin Tsai (Hsin-Chu, Taiwan), Haw-Yun Wu (Zhubei, Taiwan), Liang-Yu Su (Yunlin County, Taiwan) and Yun-Hsiang Wang (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure relates to a semiconductor device. The semiconductor device includes a channel layer over a base substrate and an active layer over the channel layer. A source and a drai...