US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "3D lateral patterning via selective deposition for ferroelectric devices" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,906, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"3D lateral patterning via selective deposition for ferroelectric devices" was invented by Song-Fu Liao (Taipei, Taiwan), Kuo-Chang Chiang (Hsinchu, Taiwan), Hai-Ching Chen (Hsinchu, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure relates to a 3D memory device, including a plurality of gate lines interleaved between a plurality of dielectric layers in a vertical direction, the plurality of gate lines forming recesses between the plurality of dielectric layers; a sou...