ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,435, issued on July 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Vertical device having a protrusion source" was invented by De-Fang Chen (Hsinchu, Taiwan), Teng-Chun Tsai (Hsinchu, Taiwan), Cheng-Tung Lin (Hsinchu County, Taiwan), Li-Ting Wang (Hsinchu, Taiwan), Chun-Hung Lee (Hsinchu, Taiwan), Ming-Ching Chang (Hsinchu, Taiwan) and Huan-Just Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming an etch stop layer over the protrusion; lateral...