US Patent Issued to Taiwan Semiconductor Manufacturing on July 1 for "Transistor gate contacts and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,408, issued on July 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor gate contacts and methods of forming the same" was invented by Cheng-Wei Chang (Taipei, Taiwan), Shahaji B. More (Hsinchu, Taiwan), Yi-Ying Liu (Hsinchu, Taiwan), Shuen-Shin Liang (Hsinchu, Taiwan) and Sung-Li Wang (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a device includes: a first insulating fin; a second insulating fin; a nanostructure between the first insulating fin and the second insulating fin; and a gate structure wrapping around the nanostructure, a top surface of the gate structure disposed...