US Patent Issued to Taiwan Semiconductor Manufacturing on July 1 for "Surface modification layer for conductive feature formation" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,724, issued on July 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Surface modification layer for conductive feature formation" was invented by Jian-Jou Lian (Tainan, Taiwan), Kuo-Bin Huang (Jhubei, Taiwan), Neng-Jye Yang (Hsinchu, Taiwan) and Li-Min Chen (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments described herein relate generally to methods for forming a conductive feature in a dielectric layer in semiconductor processing and structures formed thereby. In some embodiments, a structure includes a dielectric layer over a substrate, a surface modification layer, and a conductive featur...