US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 1 for "Structure and formation method of semiconductor device with epitaxial structures" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,446, issued on July 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Structure and formation method of semiconductor device with epitaxial structures" was invented by Tun-Jen Chang (Hsinchu, Taiwan), Tung-Heng Hsieh (Hsinchu County, Taiwan) and Bao-Ru Young (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure and a formation method are provided. The method includes forming a first fin structure, a second fin structure, a third fin structure, and a fourth fin structure over a substrate. The second fin structure is between the first fin structure and the third fin structur...