US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 1 for "Stack-gate circuit" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,469, issued on July 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Stack-gate circuit" was invented by Yu-Tao Yang (Hsinchu, Taiwan), Wen-Shen Chou (Hsinchu, Taiwan) and Yung-Chow Peng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an integrated circuit, the gates of a first high-threshold transistor and a first low-threshold transistor are connected together, and the gates of a second high-threshold transistor and a second low-threshold transistor are connected together. The drain of the first high-threshold transistor is conductively connected to the source of the first low-threshold trans...