US Patent Issued to Taiwan Semiconductor Manufacturing on July 1 for "Source/drain device and method of forming thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,426, issued on July 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Source/drain device and method of forming thereof" was invented by Chien-I Kuo (Chiayi County, Taiwan), Wei Hao Lu (Taoyuan, Taiwan), Li-Li Su (ChuBei, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor includes forming a first recess in a first semiconductor fin protruding from a substrate and forming a second recess in a second semiconductor fin protruding from the substrate first semiconductor fin and forming a source/drain region in the first recess and the second recess. ...