US Patent Issued to Taiwan Semiconductor Manufacturing on July 1 for "Simultaneous carbon nanotube growth, catalyst removal, boron nitride nanotube shell formation method for EUV pellicles" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,346,021, issued on July 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Simultaneous carbon nanotube growth, catalyst removal, boron nitride nanotube shell formation method for EUV pellicles" was invented by Pei-Cheng Hsu (Hsinchu, Taiwan), Huan-Ling Lee (Hsinchu, Taiwan), Hsin-Chang Lee (Hsinchu, Taiwan) and Chin-Hsiang Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a pellicle for an extreme ultraviolet lithography is provided. The method includes forming a pellicle membrane over a filter membrane and transferring the pellicle membrane from the filter membrane to a membrane bor...