US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 1 for "Semiconductor structure with material modification and low resistance plug" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,725, issued on July 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor structure with material modification and low resistance plug" was invented by Mrunal A. Khaderbad (Hsinchu, Taiwan) and Akira Mineji (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device that includes a semiconductor substrate, a dielectric layer over the semiconductor substrate, a conductive feature over the semiconductor substrate and buried in the dielectric layer, and a metal plug over the conductive feature and buried in the dielectric layer, where the dielectric layer has a hydrophobic sidewall fa...