ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,493, issued on July 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor structure and manufacturing method of the same" was invented by Ming-Shiang Lin (Hsinchu, Taiwan), Tzung-Yi Tsai (Taoyuan, Taiwan), Wan-Lin Chiang (Hsinchu, Taiwan), Hong-Ping Luo (Hsinchu, Taiwan), Kuo-Yu Wu (Hsinchu County, Taiwan) and Tse-Hua Lu (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device, a back-side deep trench isolation (BDTI) structure of a semiconductor device, and method of manufacturing a semiconductor structure are provided. The semiconductor device, comprising: a pixel r...