ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,393, issued on July 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor device transistor having multiple channels with different widths and materials" was invented by Chih-Ching Wang (Kinmen, Taiwan), Wei-Yang Lee (Taipei, Taiwan), Ming-Chang Wen (Kaohsiung, Taiwan), Jo-Tzu Hung (Hsinchu, Taiwan), Wen-Hsing Hsieh (Hsinchu, Taiwan) and Kuan-Lun Cheng (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide a semiconductor device structure including a first channel layer formed of a first material, wherein the first channel layer has a first width, a ...