US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 1 for "Semiconductor device having multiple electrostatic discharge (ESD) paths" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,470, issued on July 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device having multiple electrostatic discharge (ESD) paths" was invented by Yi-Feng Chang (New Taipei, Taiwan) and Jam-Wem Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided, including a first well of a first conductivity type disposed on a substrate, a second well of a second conductivity type, different from the conductivity type, surrounding the first well in a layout view, a third well of the first conductivity type, in which a portion of the second well is interposed between the ...