US Patent Issued to Taiwan Semiconductor Manufacturing on July 1 for "Semiconductor device having a gate contact on a low-k liner" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,409, issued on July 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device having a gate contact on a low-k liner" was invented by Meng-Huan Jao (Hsinchu, Taiwan), Huan-Chieh Su (Hsinchu, Taiwan), Yi-Bo Liao (Hsinchu, Taiwan), Cheng-Chi Chuang (Hsinchu, Taiwan), Jin Cai (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a substrate. A channel region of a transistor overlies the substrate and a source/drain region is in contact with the channel region. The source/drain region is adjacent to the channel region along a first direction. A s...