US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 1 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,392, issued on July 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Kun-Mu Li (Zhudong Township, Taiwan), Liang-Yi Chen (Taipei, Taiwan) and Wen-Chu Hsiao (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a gate structure formed over a channel region of the semiconductor device, a source/drain region adjacent the channel region, and an electrically conductive contact layer over the source/drain region. The source/drain region includes a first epitaxial layer having a first material composition and ...