US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 1 for "One-time-programmable device structure" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,770, issued on July 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"One-time-programmable device structure" was invented by Yu-Hsiang Chen (Hsinchu, Taiwan), Wen-Sheh Huang (Hsin Chu, Taiwan), Po-Hsiang Huang (Taipei, Taiwan) and Hsiu-Wen Hsueh (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An interconnect structure according to the present disclosure includes a first dielectric layer, a first conductive feature and a second conductive feature in the first dielectric layer, a first dielectric feature disposed directly on the first conductive feature; a first etch stop layer (ESL) disposed over ...