US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 1 for "Method for metal gate cut and structure thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,690, issued on July 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Method for metal gate cut and structure thereof" was invented by Pei-Yu Wang (Hsinchu, Taiwan), Zhi-Chang Lin (Hsinchu County, Taiwan), Ching-Wei Tsai (Hsinchu, Taiwan) and Kuan-Lun Cheng (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first fin protruding upwardly from a substrate, a second fin protruding upwardly from the substrate, a first gate structure having a first portion that at least partially wraps around an upper portion of the first fin and a second portion that at least partially wraps...