US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 1 for "Method for manufacturing semiconductor structure with dielectric feature" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,407, issued on July 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for manufacturing semiconductor structure with dielectric feature" was invented by Kuan-Ting Pan (Taipei, Taiwan), Kuo-Cheng Chiang (Zhubei, Taiwan), Yi-Ruei Jhan (Keelung, Taiwan), Shi-Ning Ju (Hsinchu, Taiwan) and Chih-Hao Wang (Baoshan Township, Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a substrate and first nanostructures and second nanostructures formed over the substrate. The semiconductor st...