US Patent Issued to Taiwan Semiconductor Manufacturing on July 1 for "Memory devices and methods of manufacturing thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,423, issued on July 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory devices and methods of manufacturing thereof" was invented by Meng-Sheng Chang (Chu-bei, Taiwan), Chia-En Huang (Hsinchu County, Taiwan) and Yih Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes first nanostructures stacked on top of one another; first gate stacks, where two adjacent ones of the first gate stacks wrap around a corresponding first nanostructure; second nanostructures stacked on top of one another; second gate stacks, where two adjacent ones of the second gate stacks wrap around a cor...