ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,474, issued on July 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory devices, circuits and methods of adjusting a sensing current for the memory device" was invented by Win-San Khwa (Taipei, Taiwan), Jui-Jen Wu (Hsinchu, Taiwan), Jen-Chieh Liu (Hsinchu, Taiwan) and Meng-Fan Chang (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A circuit includes a sense amplifier, a first clamping circuit, a second clamping circuit, and a feedback circuit. The first clamping circuit includes first clamping branches coupled in parallel between the sense amplifier and a memory array. The second clamping circuit ...