US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 1 for "Memory device having resistance switching layer and integrated circuit device having resistance switching layer" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,599, issued on July 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Memory device having resistance switching layer and integrated circuit device having resistance switching layer" was invented by Hsin-Hsiang Tseng (Changhua County, Taiwan), Chih-Lin Wang (Hsinchu County, Taiwan) and Yi-Huang Wu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a bottom electrode, a resistance switching element over the bottom electrode, a top electrode over the resistance switching element, and a dielectric layer. The dielectric layer surrounds the bottom electrode, the resistance switc...