US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 1 for "Memory device and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,336, issued on July 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory device and method for manufacturing the same" was invented by Chia-Yu Ling (Hsinchu, Taiwan) and Katherine H. Chiang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first transistor and a second transistor. Each of the first and second transistors includes a first source/drain electrode, a second source/drain electrode, a channel feature, a gate dielectric and a gate electrode. The second source/drain electrode is coplanar with the first source/drain electrode. The channel feature is disposed bet...