US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 1 for "Memory device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,329, issued on July 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Memory device and method for forming the same" was invented by Hsin-Wen Su (Yunlin County, Taiwan), Chih-Chuan Yang (Tainan, Taiwan), Shih-Hao Lin (Hsinchu, Taiwan), Yu-Kuan Lin (Taipei, Taiwan), Lien-Jung Hung (Taipei, Taiwan) and Ping-Wei Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a first semiconductor fin and a second semiconductor fin over a substrate; forming a first gate structure over the substrate and crossing the first semiconductor fin; forming a second gate structure over the substrate a...