US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 1 for "Magnetic tunnel junction (MTJ) element and its fabrication process" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,600, issued on July 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Magnetic tunnel junction (MTJ) element and its fabrication process" was invented by Ya-Ling Lee (Hsinchu, Taiwan), Tsann Lin (Hsinchu, Taiwan) and Han-Jong Chia (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic tunnel junction (MTJ) element is provided. The MTJ element includes a hard bias layer, a reference layer disposed over the hard bias layer, a tunnel barrier layer disposed over the reference layer, a free layer disposed over the tunnel barrier layer, and a diffusion barrier layer disposed over the free layer where...