US Patent Issued to Taiwan Semiconductor Manufacturing on July 1 for "Isolation structures in semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,383, issued on July 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd..

"Isolation structures in semiconductor devices" was invented by Jian-Shian Chen (Hsinchu, Taiwan) and Ru-Shang Hsiao (Jhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with different isolation structures and a method of fabricating the same are disclosed. The a method includes forming first and second fin structures on a substrate, forming a dummy fin structure on the substrate and between the first and second fin structures, forming a polysilicon structure on the dummy fin structure, forming source/drain regions on the first and sec...