US Patent Issued to Taiwan Semiconductor Manufacturing on July 1 for "Interface film to mitigate size effect of memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,366, issued on July 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Interface film to mitigate size effect of memory device" was invented by Bi-Shen Lee (Hsinchu, Taiwan), Yi Yang Wei (Hsinchu, Taiwan), Hai-Dang Trinh (Hsinchu, Taiwan), Hsun-Chung Kuang (Hsinchu, Taiwan) and Cheng-Yuan Tsai (Chu-Pei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a lower electrode structure disposed over one or more interconnects. The one or more interconnects are arranged within a lower inter-level dielectric (ILD) structu...