US Patent Issued to Taiwan Semiconductor Manufacturing on July 1 for "High selectivity isolation structure for improving effectiveness of 3D memory fabrication" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,362, issued on July 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"High selectivity isolation structure for improving effectiveness of 3D memory fabrication" was invented by Tsu Ching Yang (Taipei, Taiwan), Feng-Cheng Yang (Zhudong Township, Taiwan), Sheng-Chih Lai (Hsinchu County, Taiwan), Yu-Wei Jiang (Hsinchu, Taiwan), Kuo-Chang Chiang (Hsinchu, Taiwan), Hung-Chang Sun (Kaohsiung, Taiwan), Chen-Jun Wu (Hsinchu, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure relates to a method for forming a memory device, including forming a plu...