ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,427, issued on July 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Gate structures for semiconductor devices" was invented by Chung-Liang Cheng (Changhua County, Taiwan), Chun-I Wu (Taipei, Taiwan) and Huang-Lin Chao (Hillsboro, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "The structure of a semiconductor device with different gate structures configured to provide ultra-low threshold voltages and a method of fabricating the semiconductor device are disclosed. The method includes forming first and second nanostructured channel regions in first and second nanostructured layers, respectively, and forming first ...