US Patent Issued to Taiwan Semiconductor Manufacturing on July 1 for "Ferroelectric MFM inductor and related circuits" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,419, issued on July 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ferroelectric MFM inductor and related circuits" was invented by Miin-Jang Chen (Hsinchu, Taiwan), Po-Hsien Cheng (Hsinchu, Taiwan) and Yu-tung Yin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques in accordance with embodiments described herein are directed to a MFM structure that includes a resistance component, an inductance component and a capacitance component. The MFM device is equivalent to a series LC circuit with the resistance component coupled in parallel with the capacitance component. The MFM structure is used a...