US Patent Issued to Taiwan Semiconductor Manufacturing on July 1 for "Ferroelectric memory device and method of forming the same" (Taiwanese, Belgian Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,361, issued on July 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ferroelectric memory device and method of forming the same" was invented by Chun-Chieh Lu (Taipei, Taiwan), Sai-Hooi Yeong (Zhubei, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan), Mauricio Manfrini (Zhubei, Taiwan) and Georgios Vellianitis (Heverlee, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "A ferroelectric memory device includes a multi-layer stack, a channel layer and a III-V based ferroelectric layer. The multi-layer stack is disposed on a substrate and includes a plurality of conductive layers and a plurality of dielectric layers stacked al...