US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 1 for "Ferroelectric device and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,363, issued on July 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Ferroelectric device and methods of forming the same" was invented by Hung-Wei Li (Hsinchu, Taiwan), Sai-Hooi Yeong (Hsinchu, Taiwan), Chia-Ta Yu (New Taipei, Taiwan), Chih-Yu Chang (New Taipei, Taiwan), Wen-Ling Lu (Taoyuan, Taiwan), Yu-Chien Chiu (Hsinchu, Taiwan), Ya-Yun Cheng (Taichung, Taiwan), Mauricio Manfrini (Hsinchu, Taiwan) and Yu-Ming Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure provide a memory device and methods of forming the same. In one embodiment, a memory dev...