ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,432, issued on July 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Enlarged backside contact" was invented by Bwo-Ning Chen (Keelung, Taiwan), Xusheng Wu (Hsinchu, Taiwan), Yin-Pin Wang (Kaohsiung, Taiwan), Yuh-Sheng Jean (Hsinchu, Taiwan) and Chang-Miao Liu (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes performing a first etching process on a backside of a substrate to expose a dummy contact structure, performing a first deposition process to deposit a first portion of an oxide layer around the dummy contact structure, performing a second etching process to at least partially...