US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 1 for "Dielectric isolation structure for multi-gate transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,381, issued on July 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Dielectric isolation structure for multi-gate transistors" was invented by Jen-Hong Chang (Hsinchu, Taiwan), Yuan-Ching Peng (Hsinchu, Taiwan), Chung-Ting Ko (Kaohsiung, Taiwan), Kuo-Yi Chao (Hsinchu, Taiwan), Chia-Cheng Chao (Hsinchu, Taiwan), You-Ting Lin (Miaoli County, Taiwan), Chih-Chung Chang (Nantou County, Taiwan), Yi-Hsiu Liu (Hsinchu, Taiwan), Jiun-Ming Kuo (Hsinchu, Taiwan) and Sung-En Lin (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods of forming the same are provided. A method acco...