US Patent Issued to Taiwan Semiconductor Manufacturing on July 1 for "Circuit and methodology for power profile" (American, Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,346,147, issued on July 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Circuit and methodology for power profile" was invented by Sandeep Goel (Dublin, Calif.), Ankita Patidar (San Jose, Calif.) and Yun-Han Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an on-chip clock controller configured to provide a clock output signal and configured to receive a mode signal and a speed enable signal, and to generate a first fast clock enable signal and a first slow clock enable signal. The on-chip clock controller is configured to override the first fast clock enable signal bas...