US Patent Issued to Taiwan Semiconductor Manufacturing on July 1 for "Bi-layer alloy liner for interconnect metallization and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,728, issued on July 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Bi-layer alloy liner for interconnect metallization and methods of forming the same" was invented by Huei-Wen Hsieh (Hsinchu, Taiwan), Kai-Shiang Kuo (Hsinchu, Taiwan), Cheng-Hui Weng (Hsinchu, Taiwan), Chun-Sheng Chen (Hsinchu, Taiwan) and Wen-Hsuan Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes forming an opening in a dielectric layer, and forming a barrier layer in the opening. A combined liner layer is formed over the barrier layer by first forming a first liner layer over...