US Patent Issued to Taiwan Semiconductor Manufacturing on July 1 for "2D channel with self-aligned source/drain" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,421, issued on July 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"2D channel with self-aligned source/drain" was invented by Cheng-Ting Chung (Hsinchu, Taiwan) and Jin Cai (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes a two-dimensional transistor having a channel region having lateral ends in contact with first and second source/drain regions. The transistor includes a gate dielectric that is aligned with the lateral ends of the channel region. The transistor includes a gate metal on the gate dielectric. The gate metal has a relatively small lateral overlap of the f...