ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,844, issued on Jan. 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor structure" was invented by Jin-Aun Ng (Hsinchu, Taiwan), Yu-Chao Lin (Hsinchu, Taiwan) and Tung-Ying Lee (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided. The semiconductor structure includes a first gate-all-around FET over a substrate, and the first gate-all-around FET includes first nanostructures and a first gate stack surrounding the first nanostructures. The semiconductor structure also includes a first FinFET adjacent to the first gate-all-around FET, and the first FinFET in...