US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 28 for "Semiconductor devices with threshold voltage modulation layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,213,297, issued on Jan. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor devices with threshold voltage modulation layer" was invented by Shih-Hao Lin (Hsinchu, Taiwan), Chih-Hsiang Huang (Hsinchu County, Taiwan), Shang-Rong Li (Hsinchu, Taiwan), Chih-Chuan Yang (Hsinchu, Taiwan), Jui-Lin Chen (Taipei, Taiwan) and Ming-Shuan Li (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method comprises forming a first fin including alternating first channel layers and first sacrificial layers and a second fin including alternating second channel layers and second sacrificial layers, forming a c...