US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 28 for "Selective removal of an etching stop layer for improving overlay shift tolerance" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,700, issued on Jan. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Selective removal of an etching stop layer for improving overlay shift tolerance" was invented by Chien-Hua Huang (Miaoli County, Taiwan), Tzu-Hui Wei (Zhubei, Taiwan) and Cherng-Shiaw Tsai (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An example embodiment of the present disclosure involves a method for semiconductor device fabrication. The method comprises providing a structure that includes a conductive component and an interlayer dielectric (ILD) that includes silicon and surrounds the conductive component, and forming, over t...